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Multiplicative topological descriptors of Silicon carbide

Abaid ur Rehman Virk

Abaid ur Rehman Virk

Department of Mathematics, University of Management and TechnologyLahore, Pakistan
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Virk, Abaid ur Rehman
, 
Tanveer Abbas

Tanveer Abbas

Department of Mathematics, Minhaj UniversityLahore, Pakistan
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Abbas, Tanveer
 and 
Wasim Khalid

Wasim Khalid

Department of Mathematics, University of Lahore (Pakpattan Campus)Lahore, Pakistan
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Khalid, Wasim
  
Jun 24, 2019
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Published Online: Jun 24, 2019
Page range: 181 - 190
Received: Feb 28, 2019
Accepted: Apr 08, 2019
DOI: https://doi.org/10.2478/AMNS.2019.1.00018
Keywords
© 2019 Abaid ur Rehman Virk et al., published by Sciendo
This work is licensed under the Creative Commons Attribution 4.0 International License.

Fig. 1

Unit Cell
Unit Cell

Fig. 2

Si2C3−III[5,1]
Si2C3−III[5,1]

Fig. 3

Si2C3−III[5,2]
Si2C3−III[5,2]

Fig. 4

Si2C3−III[5,4]
Si2C3−III[5,4]

Fig. 5

Unit Cell
Unit Cell

Fig. 6

SiC3−III[5,1]
SiC3−III[5,1]

Fig. 7

SiC3−III[5,2]
SiC3−III[5,2]

Fig. 8

SiC3−III[5,4]
SiC3−III[5,4]

Edge partition of Si2C3−III[p,q]

(du,dv) Frequency
(1,3) 2
(2,2) 2p+2
(2,3) 8p+8q-12
(3,3) 15pq-10p-13q+8

Edge partition of SiC3−III[p,q]

(du, dv) Frequency
(1,2) 2
(1,3) 1
(2,2) 3p+2q-3
(2,3) 6p+4q-8
(3,3) 12pq-12p-8q+8
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